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Research Journal of Engineering and Technology
Year : 2018, Volume : 9, Issue : 1
First page : ( 67) Last page : ( 69)
Print ISSN : 0976-2973. Online ISSN : 2321-581X.
Article DOI : 10.5958/2321-581X.2018.00010.7

Comparative Study of Optical and Electrical Properties of CdSe: Sm and CdSe: Nd Nanocrystalline Thin Film

Pathak K. K.1,*, Pateria Mimi Akash2, Deshmukh Kusumanjali2

1Department of Applied Physics, Raipur Institute of Technology, Chhatauna, Mandir Hasuad, Raipur, 492101, Chhattisgarh, India

2Department of Applied Physics, Shri Shankaracharya Group of Institutions, Junwani, Bhilai, Chhattisgarh, India

*Corresponding Author Email: krishnakumarpathak81@gmail.com

Online published on 24 May, 2018.

Abstract

Rare earth (Sm or Nd) doped CdSe nanocrystalline thin film were grown onto the glass substrate by chemical bath deposition (CBD) method. Crystal structure were determined by XRD. The emission spectra of photoluminescence (PL) for Sm or Nd doped CdSe nanocrystalline thin film lies at 601nm. The band edge luminescence is responsible for PL. CdSe: Sm (6 ml, 0.01 M) and CdSe: Nd (4 ml, 0.01 M) give the highest PL intensity.

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Keywords

CdSeSm, CdSeNd Nanocrystalline Thin Film, XRD, Photoluminescence.

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