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Research Journal of Engineering and Technology
Year : 2017, Volume : 8, Issue : 4
First page : ( 414) Last page : ( 418)
Print ISSN : 0976-2973. Online ISSN : 2321-581X.
Article DOI : 10.5958/2321-581X.2017.00072.1

Emitter Selection for Efficient Si Solar Cells: PC1D Simulations

Sekhon Jagmeet Singh*

Department of Physics, Govind National College Narangwal, Govind Nagar, Narangwal, Ludhiana, 141203 (Pb), India

*Corresponding Author Email: jagmeetsekhon@ymail.com

Online published on 24 May, 2018.


The p-n junction solar cell is investigated by PC1D simulation by keeping both p type and n type as a front/emitter side towards the irradiated solar spectrum. The calculated cell parameters viz. characteristics I-V, external quantum efficiency (EQE) and open circuit voltage (Voc) helps to analyze the efficiency of solar cells. The analysis indicated that the surface recombination in the short wavelength region on the front surface can be overcome by decreasing the n type front layer thickness and hence, improve the efficiency of cell. Moreover, the reflectance in the visible regime of solar spectrum can be reduced by increasing the p type layer thickness but this improvement is not believed to be significant and hence, the study suggests the n type as a better material for front side selection in comparisons to p type. Furthermore, the fill factor (FF) and power conversion efficiency (PCE) calculation helps to optimize the layer thickness. We have achieved an open circuit voltage of 723mV and a fill factor of about 84% at 0.5μm layer thickness of n type material.



Solar cells, Si, EQE, Power conversion efficiency, Fill Factor.


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