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International Journal of Technology
Year : 2018, Volume : 8, Issue : 1
First page : ( 23) Last page : ( 32)
Print ISSN : 2231-3907. Online ISSN : 2231-3915.
Article DOI : 10.5958/2231-3915.2018.00005.6

Impact of various doping distributions on N-Mosfet performance

Ms. Sachdeva Nitin1,*, Dr. Vashishath Munish2, Bansal P.K.3

1Assistant Professor, Electronics Department, YMCAUST, Faridabad, India

2Chairman and Professor, Electronics Department, YMCAUST, Faridabad, India

3Professor, Electronics Department, MMIT, Malout, India

*Corresponding Author E-mail:

Online published on 21 August, 2018.


In this paper, the Gaussian and Pearson doping profiles of Source/Drain regions are considered to compare the electrical characteristics of lightly doped NMOSFET. The effects of drift parameter (Gaussian or Pearson doping profile in the S/D region), ON current, OFF state leakage current, On/Off ratioand threshold voltage have been investigated. The virtual fabrication is performed in ATHENA and then simulated with ATLAS of SILVACO TCAD tool. For this paper, the Gaussian and Pearson doping profile that is used to control the short-channel effects in the Single Gate MOSFET are therefore investigated with the use of a two dimensional (2D) quantum simulation, whereby the MOSFET channel length is 40 nm. The suggested model results have been validated by comparing them with their corresponding SILVACO TCAD simulation data obtained by using a 2D ATLAS tool, a two dimensional device simulator from SILVACO. It has been observed that Pearson doping profile gives best performance in the terms of reduced leakage current equals to 6.92924nA and Gaussian doping profile gives best performance in terms of substrate current. The absolute net doping profiles are also compared for both Gaussian and Pearson doping profiles. The effect of gate oxide thickness is also varied and drain current characteristics has been plotted with various gate oxide thicknesses.





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