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ACADEMICIA: An International Multidisciplinary Research Journal
Year : 2020, Volume : 10, Issue : 6
First page : ( 282) Last page : ( 287)
Online ISSN : 2249-7137.
Article DOI : 10.5958/2249-7137.2020.00620.5

Current transport mechanisms in anisotype heterojunctions p-Cu2ZnSnS4/n-Si

Yusupov Ahmed, Aliev Sukhrob, Turaev Zafar

Andijan Machine-Building Institutte, 56.Babur shox Street, Andijan, Uzbekistan, Email id: suhrob_asr89@mail.ru

Online published on 10 August, 2020.


Anisotype heterojunctions p-Cu2ZnSnS4/n-Si were fabricated by sulfurization of metalprecursors which were deposited on a poly-Si substrate. Current -voltage characteristics are discussed and the dominating mechanisms of current transfer are determined: at a direct bias tunnel recombination processes prevail with participation of defect states on interface of heterojunction, when voltage increases Newman-s tunnel mechanism dominates. The reverse current through the heterojunctions under investigationwas analyzed within the tunnel mechanism.



Heterojunction, Silicon, CZTS, Current-Voltage Characteristic, Current Transport.


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