Department of Physics, Indian Institute of Technology, New Delhi-110016, India
We fabricate PEDOT:PSS/n-Si heterojunction diode by deposition of Poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) on n-type Si wafer using spin coating process. In this study, temperature dependent electrical properties of the diode were investigated. This heterojunction diode showed a good quality rectifying behavior. It was found that the ideality factor increases and barrier height decreases with decrease in temperature. Such a behavior is attributed to barrier inhomogeneities. Resistivity measurements showed that resistivity decreases with increasing temperature.
PEDOT:PSS, heterojunction, ideality factor
